L-band Microwave LNA
- Purpose: Construction of radio transceivers.
- Year of release: 2014
- Guaranteed service life (years): 3
- Estimated production / delivery time (months): 10
- Flight qualification of the product: No
- Possibility to adapt the product to customer requirements: No
| Parameter | Value |
|---|---|
| W*H*T | 5*5*1 mm |
| Weight | 2 g |
| Supply voltage | 3±0,3 V |
| Operating temperature range | -60 - +85 C° |
| Case | 5140.8-АН3 (Metal and ceramic case) |
| Consumption current | 5 mA |
| Noise figure | 1,8 db |
| Input Compression Point | -30 dBm |
| Input frequency range | 0.1…2 GHz |
| Operating frequency range | 0.1…2 GHz |
| Gain | 21 dB |
| VSWR (In 50 Ohm tract) | 2 |
Application of the chip:
MMIC LNA is designed for equipment with severe restrictions on the level of power consumption, including:
- satellite communications and navigation equipment;
- radar;
- appliances;
Short description of the chip:
Due to the capabilities of BiKMOS circuitry and the high speed of silicon-germanium transistors, silicon-germanium BiKMOS microwave MMIC LNA has significantly lower power consumption compared to gallium arsenide MMIC LNA with comparable noise parameters:
- power consumption - 15 mW;
- the noise figure is 1.8 dB.
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