L-band Microwave LNA

Purpose:
Construction of radio transceivers.
Year of release: 2014
Guaranteed service life (years): 3
Estimated production / delivery time (months): 10
Flight qualification of the product: No
Possibility to adapt the product to customer requirements: No


Parameter Value
W*H*T 5*5*1 mm
Weight 2 g
Supply voltage 3±0,3 V
Operating temperature range -60 - +85 C°
Case 5140.8-АН3 (Metal and ceramic case)
Consumption current 5 mA
Noise figure 1,8 db
Input Compression Point -30 dBm
Input frequency range 0.1…2 GHz
Operating frequency range 0.1…2 GHz
Gain 21 dB
VSWR (In 50 Ohm tract) 2

Description

Application of the chip: MMIC LNA is designed for equipment with severe restrictions on the level of power consumption, including: - satellite communications and navigation equipment; - radar; - appliances; Short description of the chip: Due to the capab
... Application of the chip:
MMIC LNA is designed for equipment with severe restrictions on the level of power consumption, including:
- satellite communications and navigation equipment;
- radar;
- appliances;
Short description of the chip:
Due to the capabilities of BiKMOS circuitry and the high speed of silicon-germanium transistors, silicon-germanium BiKMOS microwave MMIC LNA has significantly lower power consumption compared to gallium arsenide MMIC LNA with comparable noise parameters:
- power consumption - 15 mW;
- the noise figure is 1.8 dB.

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