Microwave p-i-n elements

    • Microwave p-i-n elements

    Purpose:
    Designed to work as devices for discrete control of the amplitude and phase of the transmitted signal in the modules of discrete phase shifters of of Active Electronically Scanned Array of space-based location and communication systems.
    Year of release: 2013
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    Parameter Value
    Operating frequency > 50 GHz
    Capacity (Ureverse = 10 V, fizm = 1 MHz) 0,001-0,015 Petafarad
    Forward loss resistance (при Idirect = 10 mА и fizm = (3-4) GHz) 5.0 ohms
    Constant forward voltage (Idirect = 5 mА) 0.9-1.1 V
    Reverse current (Ureverse = 30 V) 0.05-0.08 µA
    Breakdown voltage (I reverse = 10 µA) > 50 V
    The thickness of the semiconductor membrane 5 – 20 µm

    Description

    Uncased microwave p-i-n elements switching p-i-n elements with beam terminals based on thin semiconductor and dielectric membranes with an operating frequency of up to 50 GHz.

    Remark

    Application areas:

    - Aviation

    - Space

    - Radio engineering, electronics, microelectronics

    - Civil industries


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